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MG2040
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 2)
Clamping Voltage
TLP (Note 3)
See Figures 8 through 11
V RWM
V BR
I R
V C
V C
V C
I/O Pin to GND (Note 1)
I T = 1 mA, I/O Pin to GND
V RWM = 5 V, I/O Pin to GND
I PP = 1 A, I/O Pin to GND (8 x 20 m s pulse)
IEC61000 ? 4 ? 2, ± 8 kV Contact
I PP = 8 A
I PP = 16 A
I PP = ? 8 A
I PP = ? 16 A
5.5
See Figures 3 and 4
11.4
15.3
? 4.6
? 8.1
5.0
1.0
10
V
V
m A
V
V
Junction Capacitance
C J
V R = 0 V, f = 1 MHz between I/O Pins
0.15
0.20
pF
V R = 0 V, f = 1 MHz between I/O Pins and GND
0.35
0.42
Junction Capacitance
Difference
D C J
V R = 0 V, f = 1 MHz between I/O Pins
V R = 0 V, f = 1 MHz between I/O Pins and GND
0.02
0.04
pF
1. Surge current waveform per Figure 7.
2. For test procedure see Figures 5 and 6 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 ? Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z 0 = 50 W , t p = 100 ns, t r = 4 ns, averaging window; t 1 = 30 ns to t 2 = 60 ns.
90
80
70
60
50
40
30
20
10
0
0
? 10
? 20
? 30
? 40
? 10
? 20
0
20
40
60 80
100
120
140
? 50
? 20
0
20
40
60 80
100
120
140
TIME (ns)
Figure 3. IEC61000 ? 4 ? 2 +8 KV Contact
Clamping Voltage
http://onsemi.com
3
TIME (ns)
Figure 4. IEC61000 ? 4 ? 2 ? 8 KV Contact
Clamping Voltage
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